• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention provides a method for forming a multi-metal layer of a semiconductor device, and after depositing a tungsten film using a low pressure chemical vapor deposition method when depositing tungsten on a silicon substrate subjected to a predetermined process, plasma chemical vapor deposition using RF power continuously The method reacts N 2 or NH 3 with WF 6 to deposit a thermally and chemically stable tungsten nitride layer on the tungsten layer, thereby increasing resistance such as WAl 12 , WAl 5 and Ti-W-Al by diffusion of titanium and metal layers. By suppressing the production of the compound, there is an effect that can improve the yield of the device.
    公开号:KR19980054442A
    申请号:KR1019960073605
    申请日:1996-12-27
    公开日:1998-09-25
    发明作者:진성곤；김춘환
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    Method of forming multiple metal layers in semiconductor devices
    The present invention relates to a method for forming a multi-metal layer of a semiconductor device capable of forming a tungsten nitride layer on a tungsten layer on a silicon substrate subjected to a predetermined process of the present invention to suppress the formation of a compound by diffusion of titanium and a metal layer.
    In general, as the semiconductor devices are highly integrated, the size of the contact hole for forming the metal layer is reduced, and the formation of metal wiring using aluminum does not secure sufficient step coverage for the fabrication of reliable devices. Therefore, wiring formation and contact hole filling technology using tungsten has been actively studied and applied to many device fabrication. When forming the wiring using tungsten (W), the first metal layer is formed of tungsten, and the second metal layer or more uses a method of using wetting titanium and aluminum. In this case, the WAl 12 , WAl 5 titanium (Ti) -tungsten (W) -aluminum (Al) compound is formed by the reaction of tungsten, titanium, and aluminum in the subsequent heat treatment in the via where the first metal layer and the second metal layer are contacted. Increasing via resistance creates a problem of deteriorating device characteristics.
    Therefore, in the present invention, a tungsten film is deposited by using a low pressure chemical vapor deposition (LPCVD) method in tungsten deposition. by reacting 2 or NH 3 and WF 6 to provide a multi-metal layer forming a semiconductor device that can obtain a stable via resistance by depositing thermally chemically stable tungsten nitride (WNx) film on the tungsten layer to that end.
    According to an aspect of the present invention, there is provided a method of forming a multi-metal layer, the method comprising: forming a contact hole by forming an insulating film on a silicon substrate on which a junction region is formed through a predetermined process, and then etching the insulating layer to expose the junction region; Forming a barrier metal layer on the entire upper surface of the silicon substrate, and then forming a first metal layer on the barrier metal layer, and sequentially forming a tungsten nitride layer and a first antireflective coating layer on the first metal layer. And forming a first metal layer pattern through an exposure and etching process, forming an interlayer insulating film on the entire upper surface of the silicon substrate, and then exposing the tungsten nitride layer formed on the first metal layer pattern to expose the interlayer insulating film and the first metal layer pattern. Sequentially etching the anti-reflective coating layer to form via holes, and remaining tungs in the via holes. Removing the nitride layer and the native oxide film by an RF etching process, forming a wetting film on the entire upper surface of the silicon substrate, and subsequently forming a second metal layer and a second anti-reflective coating film, and an exposure and etching process Forming a second metal layer pattern through.
    1A to 1F are cross-sectional views of a device for explaining a method of forming a multi-metal layer of a semiconductor device according to the present invention.
    * Description of the symbols for the main parts of the drawings *
    1: silicon substrate 2: junction area
    3: insulating film 4: barrier metal layer
    5: first metal layer 5A: first metal layer pattern
    6: tungsten nitride layer
    7A and 7B: 1st and 2nd anti-reflective coating film
    8 interlayer insulating film 9 wetting film
    10: second metal layer
    Hereinafter, the present invention will be described in detail with reference to the accompanying drawings, a method of forming a multi-metal layer according to the present invention.
    1A to 1F are cross-sectional views of a device for explaining a method of forming a multi-metal layer of a semiconductor device. FIG. 1A shows a junction region 2 after forming an insulating film 3 on a silicon substrate 1 on which a junction region 2 is formed. ) Shows a state in which the contact hole 20 is formed by etching the insulating film 3 to expose.
    FIG. 1B shows a state in which the barrier metal layer 4 is formed on the entire upper surface of the silicon substrate 1 and then the first metal layer 5 is formed on the barrier metal layer 4. The barrier metal layer 4 is made of titanium and titanium nitride layer, wherein the titanium layer is formed to a thickness of 3000 to 5000Å, the titanium nitride layer is formed to a thickness of 500 to 1000Å. The first metal layer 5 is made of tungsten (W) having a thickness of 3000 to 5000 kPa, wherein the first metal layer is 420 to 480 ° C while 10 to 100 sccm of WF 6 and 1000 to 1800 sccm of H 2 are supplied into the reactor. At a temperature of and a pressure of 1 to 90 Torr.
    FIG. 1C shows a state in which a tungsten nitride layer 6 and a first antireflection coating film 7A are sequentially formed on the first metal layer 5. The tungsten nitride layer 6 is deposited to a thickness of 20 to 500 kW under RF power conditions of 200 to 500 W while 10 to 20 sccm of WF 6 and 10 to 300 sccm of N 2 or NH 3 are supplied into the reactor. The first anti-reflection coating film 7A is made of titanium nitride and formed to a thickness of 300 to 500 kPa.
    FIG. 1D shows a state in which the first metal layer pattern 5A is formed by an exposure and etching process. The first metal layer pattern 5A is the first antireflective coating film 7A. The tungsten nitride layer 6, the first metal layer 5 and the barrier metal layer 4 are sequentially patterned.
    FIG. 1E shows the interlayer insulating film 8 and the first to expose the tungsten nitride layer 6 formed on the first metal layer pattern 5A after forming the interlayer insulating film 8 on the entire upper surface of the silicon substrate 1. The antireflective coating film 7A is sequentially etched to form the via holes 30, and the tungsten nitride layer 6 and the natural oxide film (not shown) remaining in the via holes 30 are removed by the RF etching process. . The loss of the tungsten nitride layer 6 generated in the process of removing the natural oxide film is performed by RF etching so that the tungsten nitride layer 6 has a thickness of 10 to 300 kPa.
    FIG. 1F illustrates a state in which the second metal layer 10 and the second anti-reflective coating film 7B are sequentially formed after the wetting film 9 is formed on the entire upper surface of the silicon substrate 1. The wetting film 9 is deposited to a thickness of 500 to 1000 kW at room temperature to improve step coverage of the second metal layer 10. The second metal layer 10 is made of aluminum and is formed to a thickness of 6000 to 10000 kPa. Thereafter, a second metal layer pattern is formed through an exposure and etching process as in the case of forming the first metal layer pattern 5A.
    As described above, according to the present invention, a tungsten nitride layer is formed on the tungsten layer to suppress the formation of compounds having high resistance such as WAl 12 , WAl 5 and Ti-W-Al due to diffusion of titanium and metal layers. There is an effect that can improve the yield.
    权利要求:
    Claims (9)
    [1" claim-type="Currently amended] In the method of forming a multiple metal layer of a semiconductor device,
    Forming a contact hole by forming an insulating film on the silicon substrate on which the junction region is formed through a predetermined process and then etching the insulating film to expose the junction region;
    Forming a barrier metal layer on the entire upper surface of the silicon substrate, and then forming a first metal layer on the barrier metal layer;
    Sequentially forming a tungsten nitride layer and a first anti-reflective coating film on the first metal layer;
    Forming a first metal layer pattern by an exposure and etching process;
    Forming via holes by sequentially etching the interlayer insulating film and the first anti-reflective coating film to expose the tungsten nitride layer formed on the first metal layer pattern after forming the interlayer insulating film on the entire upper surface of the silicon substrate; ,
    Removing the tungsten nitride layer and the native oxide layer remaining in the via hole by an RF etching process;
    Forming a second metal layer and a second anti-reflective coating film sequentially after forming a wetting film on the entire upper surface of the silicon substrate;
    Forming a second metal layer pattern through an exposure and etching process.
    [2" claim-type="Currently amended] The method of claim 1,
    The barrier metal layer is made of a titanium and titanium nitride layer, the titanium layer is formed to a thickness of 3000 to 5000Å, the titanium nitride layer is a multiple metal layer of the semiconductor device, characterized in that formed to a thickness of 500 to 1000Å Formation method.
    [3" claim-type="Currently amended] The method of claim 1,
    The first metal layer is made of tungsten having a thickness of 3000 to 5000 Pa at a temperature of 420 to 480 ° C. and a pressure of 1 to 90 Torr while supplying 10 to 100 sccm of WF 6 and 1000 to 1800 sccm of H 2 into the reactor. A method of forming a multi-metal layer of a semiconductor device.
    [4" claim-type="Currently amended] The method of claim 1,
    The tungsten nitride layer is formed with a thickness of 20 to 500 kW under RF power conditions of 200 to 500 W while 10 to 20 sccm of WF 6 and 10 to 300 sccm of N 2 or NH 3 are supplied into the reactor. Method for forming a multi-metal layer of the.
    [5" claim-type="Currently amended] The method of claim 1,
    The first anti-reflective coating film is made of titanium nitride, characterized in that formed of a thickness of 300 to 500Å of a multiple metal layer of a semiconductor device.
    [6" claim-type="Currently amended] The method of claim 1,
    The first metal layer pattern is formed by sequentially patterning a first anti-reflective coating film, a tungsten nitride layer, a first metal layer and a barrier metal layer.
    [7" claim-type="Currently amended] The method of claim 1,
    The tungsten nitride layer remaining in the via hole is a method of forming a multi-metallic layer of the semiconductor element, characterized in that the thickness of 10 to 300Å by the RF etching process.
    [8" claim-type="Currently amended] The method of claim 1,
    The wetting film is a method of forming a multiple metal layer of a semiconductor device, characterized in that the second metal layer of the subsequent process is deposited to a thickness of 500 to 1000 Å at room temperature to improve step coverage.
    [9" claim-type="Currently amended] The method of claim 1,
    The second metal layer is made of aluminum, the method of forming a multiple metal layer of a semiconductor device, characterized in that formed to a thickness of 6000 to 10000Å.
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    同族专利:
    公开号 | 公开日
    KR100223267B1|1999-10-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1996-12-27|Application filed by 김영환, 현대전자산업 주식회사
    1996-12-27|Priority to KR1019960073605A
    1998-09-25|Publication of KR19980054442A
    1999-10-15|Application granted
    1999-10-15|Publication of KR100223267B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019960073605A|KR100223267B1|1996-12-27|1996-12-27|Method for forming multi metal interconnection layer of semiconductor device|
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